B.TECH. IN ELECTRONICS ENGINEERING (VLSI DESIGN AND TECHNOLOGY)coretheory
PHYSICS OF SEMICONDUCTOR DEVICES
ECE 2226
Syllabus
- 01Electrical Conduction in Solids
- 02Density of States Function
- 03The Fermi–Dirac Probability Function
- 04Charge Carriers in Semiconductors
- 05Dopant Atoms and Energy Levels
- 06The Extrinsic Semiconductor
- 07Statistics of Donors and Acceptors
- 08Charge Neutrality
- 09Position of Fermi Energy Level
- 10Carrier Drift
- 11Carrier Diffusion
- 12Graded Impurity Distribution
- 13The Hall Effect
- 14Carrier Generation and Recombination
- 15Characteristics of Excess Carriers
- 16Ambipolar Transport
- 17Quasi-Fermi Energy Levels
- 18Excess Carrier Lifetime
- 19Surface Effects
- 20Basic Structure of the pn Junction
- 21Reverse Applied Bias
- 22Junction Breakdown
- 23No uniformly Doped Junctions
- 24pn Junction Current
- 25Generation–Recombination Currents and High-Injection Levels
- 26Small-Signal Model of the pn Junction
- 27Charge Storage and Diode Transients
- 28The Tunnel Diode
- 29The Schottky Barrier Diode
- 30Metal–Semiconductor Ohmic Contacts
- 31Heterojunctions
- 32The Two-Terminal MOS Structure
- 33Capacitance–Voltage Characteristics
- 34The Basic MOSFET Operation
References
- Donald A Neamen, “Semiconductor Physics and Devices: Basic Principles”, McGraw-Hill, 2012.
- S.M. Sze, Kwok K. Ng “Physics of Semiconductor Device,” Wiley Interscience Publication, 2006.
- Streetman, Ben G., and Sanjay Banerjee, “Solid State Electronic Devices”, Upper Saddle River, N.J.: Pearson/Prentice Hall, 2006.
- M Achuthan, K Bhat, “Fundamentals of Semiconductor Devices”, McGraw Hill Education, 2017.
- Y. Taur, & T. Ning, “Fundamentals of Modern VLSI Devices” 3rd ed., Cambridge: Cambridge University Press, 2021.
Credits Structure
4Lecture
0Tutorial
0Practical
4Total